A comparison of ns and ps steam laser cleaning of Si surfaces

被引:43
作者
Mosbacher, M
Chaoui, N
Siegel, J
Dobler, V
Solis, J
Boneberg, J
Afonso, CN
Leiderer, P
机构
[1] Univ Konstanz, Fac Phys, D-78457 Constance, Germany
[2] CSIC, Inst Opt, E-28006 Madrid, Spain
来源
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1999年 / 69卷 / Suppl 1期
关键词
D O I
10.1007/s003390051411
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We report a quantitative investigation on the efficiency of the steam laser cleaning process using ns and ps pulses. Well-characterized polymer particles with a diameter of 800 nm dispersed on commercial Si wafers were chosen as a modeling contaminant system. As a result of our investigation, we show for the first time the feasibility of performing efficient steam laser cleaning with ps laser pulses and compare the achieved efficiency with the one obtained for ns pulses. For ns pulses, we found a cleaning fluence threshold of 50 mJ/cm(2) that is independent of the pulse durations (2.5 ns and 8 ns) and the wavelengths (532 nm and 583 nm) used. The application of ps pulses (FWHM = 30ps, lambda = 583 nm) lowered this threshold to 20mJ/cm(2). Both cleaning thresholds are far below the melting thresholds for these laser parameters. Cleaning efficiencies > 90% were reached for both pulse durations.
引用
收藏
页码:S331 / S334
页数:4
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