Growth mechanisms of SnO2/Sn nanocables

被引：30

作者：

Wang, B. ^{[1
]}

Yang, Y. H. ^{[1
]}

Yang, G. W. ^{[1
]}

机构：

[1] Zhongshan Univ, Sch Phys Sci & Engn, Inst Optoelect & Funct Composite Mat, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Peoples R China

来源：

NANOTECHNOLOGY | 2006年 / 17卷 / 18期

关键词：

D O I：

10.1088/0957-4484/17/18/026

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

SnO2/Sn nanocables have been grown on single-crystal Si substrates by metal catalyst assisted thermal evaporation of SnO powders. The morphologies and structures of the prepared nanocables were determined on the basis of field emission scanning electron microscopy (FESEM), high-resolution transmission electron microscopy (HRTEM), x-ray diffraction (XRD), Raman and photoluminescence (PL) spectra analyses. The microstructures and compositions of the top and bottom regions of the SnO2/Sn nanocables were identified by HRTEM in detail, which revealed some basic physical and chemical processes involved in the formation of the nanocables. A growth model was proposed to address the formation of SnO2/Sn nanocables on the basis of the vapour-liquid-solid (VLS) process.

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收藏

页码：4682 / 4688

页数：7

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