Thermoelectric properties of Cu-doped p-type pseudo-binary CuxBi0.5-xTe3 (x=0.05-0.4) alloys prepared by spark plasma sintering

被引：45

作者：

Cui, J. L. ^{[1
]}

Xue, H. F.

Xiu, W. J.

Yang, W.

Xu, X. B.

机构：

[1] Ningbo Univ Technol, Sch Mech Engn, Ningbo 315016, Peoples R China

[2] China Univ Min & Technol, Sch Mat Sci & Engn, Xuzhou 221008, Peoples R China

来源：

SCRIPTA MATERIALIA | 2006年 / 55卷 / 04期

关键词：

compound semiconductor; spark plasma sintering; electrical conductivity; thermal conductivity;

D O I：

10.1016/j.scriptamat.2006.04.012

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Measurements conducted on the Cu-doped CuxBi0.5Sb1.5-xTe3 (x=0.05-0.4) alloys show that their electrical conductivities are approximately 8.6 and 2.3 times those of the ternary Bi0.5Sb1.5Te3 alloy at room temperature and 558 K, respectively, and reveal a drastic reduction of lattice thermal conductivities after Cu doping. The highest dimensionless figure of merit ZT of 1.2 is achieved for the materials with x=0.05 at 442 K, being approximately 2.1 times that of typical ternary Bi0.5Sb1.5Te3 alloy at room temperature. (c) 2006 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

引用

页码：371 / 374

页数：4

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