High peak power (1.1W) (Al)GaAs quantum cascade laser omitting at 9.7μm

被引：20

作者：

Page, H ^{[1
]}

Kruck, P ^{[1
]}

Barbieri, S ^{[1
]}

Sirtori, C ^{[1
]}

Stellmacher, M ^{[1
]}

Nagle, J ^{[1
]}

机构：

[1] Thomson CSF, Cent Rech Lab, F-91404 Orsay, France

来源：

ELECTRONICS LETTERS | 1999年 / 35卷 / 21期

关键词：

D O I：

10.1049/el:19991268

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A unipolar quantum cascade laser operating at 9.7 mu m and a temperature of 77K based on the AlGaAs material system is reported. Collected peak output powers > 1W per facet are demonstrated, which it is believed have never been achieved before for quantum cascade lasers emitting at this wavelength. The maximum slope efficiency is 240mW/A.

引用

页码：1848 / 1849

页数：2

共 7 条

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