Photoconduction studies on GaN nanowire transistors under UV and polarized UV illumination

被引：155

作者：

Han, S ^{[1
]}

Jin, W ^{[1
]}

Zhang, DH ^{[1
]}

Tang, T ^{[1
]}

Li, C ^{[1
]}

Liu, XL ^{[1
]}

Liu, ZQ ^{[1
]}

Lei, B ^{[1
]}

Zhou, CW ^{[1
]}

机构：

[1] Univ So Calif, Dept EE Electrophys, Los Angeles, CA 90089 USA

来源：

CHEMICAL PHYSICS LETTERS | 2004年 / 389卷 / 1-3期

基金：

美国国家科学基金会; 美国国家航空航天局;

关键词：

D O I：

10.1016/j.cplett.2004.03.083

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Photoconduction studies have been carried out with single crystal GaN nanowires. The nanowire transistors exhibited a substantial increase in conductance upon UV light exposure. Besides the selectivity to different light wavelengths, extremely short response and recovery time have also been obtained, as well as the great reversibility of the nanowire between the high and low conductivity states. In addition, a polarization anisotropy effect was demonstrated and studied for GaN nanowires working as polarized UV detectors. The nanowire conductance varied periodically with the polarization angle of the incident light (theta), which can be well fitted into a function of cos(2)theta. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：176 / 180

页数：5

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