Study of bulk damage in high resistivity silicon detectors irradiated by high dose of Co-60 gamma-radiation

被引：15

作者：

Li, Z

Li, CJ

Verbitskaya, E

机构：

[1] Brookhaven National Laboratory, Upton

[2] Institute of Semiconductors, Chinese Academy of Sciences, Beijing

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1997年 / 44卷 / 03期

关键词：

D O I：

10.1109/23.603761

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Displacement damage (or bulk damage) induced by high dose (>200 Mrad) gamma-radiation in high resistivity (6-10 k Omega-cm) silicon detectors has been studied. It has been found that detector bulk leakage current increases with gamma dose at a rate of 3.3x10(-7) A/cm(3)/Mrad. This damage rate of bulk leakage current originates from the introduction of generation centers and at a dose of 210 Mrad of gamma-radiation is comparable to that induced by 1x10(12) n/cm(2) of neutron radiation. Nearly 100% donor removal and/or compensation was found in detectors irradiated to 215 Mrad. Space charge sign inversion (SCSI) was observed in detectors irradiated to greater than or equal to 215 Mrad using transient current technique (TCT). As many as six deep levels have been observed by current deep level transient spectroscopy (I-DLTS). There was insignificant annealing and no reverse annealing even after elevated temperature treatment for detectors irradiated to 215 Mrad. A small amount of reverse annealing (10 to 15%) has been observed during the room temperature storage period of about 11 months for detectors irradiated to 500 Mrad.

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收藏

页码：834 / 839

页数：6

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