Electric carrier concentration in graphite: Dependence of electrical resistivity and magnetoresistance on defect concentration

被引：37

作者：

Arndt, A. ^{[1
]}

Spoddig, D. ^{[1
]}

Esquinazi, P. ^{[1
]}

Barzola-Quiquia, J. ^{[1
]}

Dusari, S. ^{[1
]}

Butz, T. ^{[1
]}

机构：

[1] Univ Leipzig, Inst Expt Phys 2, D-04103 Leipzig, Germany

来源：

PHYSICAL REVIEW B | 2009年 / 80卷 / 19期

关键词：

carrier density; electrical resistivity; graphite; Shubnikov-de Haas effect;

D O I：

10.1103/PhysRevB.80.195402

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We investigate the dependence of the electrical resistivity and magnetoresistance of single crystalline micrometer-sized graphite samples of a few tens of nanometers thick on the defect concentration produced by irradiation at low fluences. We show that the carrier density of graphite n is extremely sensitive to the induced defects for concentrations as low as similar to 0.1 ppm and follows n similar to 1/R(V)(2) with R(V) the distance between defects in the graphene plane. These and Shubnikov-de Haas oscillations results indicate that at least a relevant part of the carrier densities measured in graphite is not intrinsic.

引用

页数：5

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