Exploiting the potential of 2-((5-(4-(diphenylamino)phenyl)thiophen-2-yl)methylene)malononitrile as an efficient donor molecule in vacuum-processed bulk-heterojunction organic solar cells

被引：43

作者：

Choi, Jin Woo ^{[1
]}

Kim, Chang-Hyun ^{[1
]}

Pison, Jonathan ^{[1
]}

Oyedele, Akinola ^{[1
]}

Tondelier, Denis ^{[1
]}

Leliege, Antoine ^{[2
]}

Kirchner, Eva ^{[2
]}

Blanchard, Philippe ^{[2
]}

Roncali, Jean ^{[2
]}

Geffroy, Bernard ^{[1
,3
]}

机构：

[1] Ecole Polytech, CNRS, UMR 7647, LPICM, F-91128 Palaiseau, France

[2] Univ Angers, CNRS, UMR 6200, MOLTECH Anjou,Linear Conjugated Syst Grp,LUNAM, F-49045 Angers, France

[3] CEA Saclay, DSM IRAMIS SPCSI LCSI, F-91191 Gif Sur Yvette, France

来源：

RSC ADVANCES | 2014年 / 4卷 / 10期

关键词：

INTERNAL CHARGE-TRANSFER; CIRCUIT CURRENT-DENSITY; THIN-FILM; SEMICONDUCTORS; PERFORMANCE; ALUMINUM; VOLTAGE; SYSTEMS; CUPC;

D O I：

10.1039/c3ra47059h

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A comprehensive experimental study is reported on the optical and electrical characteristics of 2-((5-(4-(diphenylamino)phenyl)thiophen-2-yl)methylene)malononitrile (DPTMM) when used as molecular donor in an organic solar cell (OSC) device structure. A major property of this new donor-type material is an unusually deep highest-occupied molecular orbital (HOMO) level that leads to a high open-circuit voltage (V-oc). A reasonably high hole-mobility was also observed in a hole-injection diode configuration. These are both promising factors for high-performance OSCs. In order to fully explore the potential of DPTMM in bulk-heterojunction-based OSCs, a step-wise experimental strategy was applied to optimize film composition and cell architecture. By co-evaporating the DPTMM with C-60 to promote exciton dissociation by maximizing the heterojunction area power conversion efficiency (PCE) of 3.0% was achieved. Finally, inserting a buffer layer and a spatial gradient of the donor/acceptor ratio was found to provide better conduction paths for charge carriers. The maximum obtained PCE was 4.0%, which compares favorably with the state-of-the-art of high-performance OSCs. All optimized devices show quite unusual high V-oc values up to 1 V.

引用

页码：5236 / 5242

页数：7

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