Two-dimensional analytical Mott-Gurney law for a trap-filled solid

被引:93
作者
Chandra, W.
Ang, L. K. [1 ]
Pey, K. L.
Ng, C. M.
机构
[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore
[2] Chartered Semicond Mfg Ltd, Singapore 738406, Singapore
关键词
D O I
10.1063/1.2721382
中图分类号
O59 [应用物理学];
学科分类号
摘要
The letter presents a two-dimensional analytical model of the space charge limited (SCL) current injection in a solid with exponentially distributed trap energy state. By considering that the electrons are injected from an infinitely long emission strip of width W, the one-dimensional SCL current density is enhanced by a factor of 1+F(4/pi)/(W/L), where F=1/(l+2) measures the mean position of the injected electrons in the solid of length L, and l is the ratio of the distribution of the traps to the free carriers. The analytical formula is verified by using a two-dimensional device simulator. (c) 2007 American Institute of Physics.
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页数:3
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