Polymer space-charge-limited transistor

被引：46

作者：

Chao, Yu-Chiang

Meng, Hsin-Fei ^{[1
]}

Horng, Sheng-Fu

机构：

[1] Natl Chiao Tung Univ, Inst Phys, Hsinchu 300, Taiwan

[2] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 22期

关键词：

D O I：

10.1063/1.2207838

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A metal grid is sandwiched between poly(3-hexylthiophene) to form a solid-state version of vacuum tube triode, where the vertical space-charge-limited current is modulated by the grid potential. The Al grid contains random submicron openings formed by a nonlithographic method. The multilayer polymer structure is made by spin coating. The operating voltage of the polymer space-charge-limited transistor is 3 V, and the current gain of 506 is obtained. The characteristics of the transistor can be tuned by the diameters and the density of the openings on the grid. Similar to the vacuum tube triode, the current follows a power law voltage dependence.

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页数：3

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