Patterning-free integration of polymer light-emitting diode and polymer transistor

被引：32

作者：

Li, ZL ^{[1
]}

Yang, SC

Meng, HF

Chen, YS

Yang, YZ

Liu, CH

Horng, SF

Hsu, CS

Chen, LC

Hu, JP

Lee, RH

机构：

[1] Natl Tsing Hua Univ, Inst Phys, Hsinchu 300, Taiwan

[2] Natl Tsing Hua Univ, Dept Elect Engn, Hsinchu 300, Taiwan

[3] Natl Tsing Hua Univ, Dept Appl Chem, Hsinchu 300, Taiwan

[4] Delta Optoelect Inc, Hsinchu 300, Taiwan

[5] Ind Technol Res Inst, Optoelect & Syst Labs, Hsinchu 310, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 18期

关键词：

D O I：

10.1063/1.1728301

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate an integration of polymer light-emitting diode (LED) and polymer transistor in which no patterning of the organic layers is needed. Intrinsic high-mobility semiconducting conjugated polymer poly(3-hexylthiophene)(P3HT) is used as the hole-transport layer for polymer LED. The light emission efficiency is only slightly lower than the LED with conventional heavily doped hole-transport layer. Such LED is easily integrated with a P3HT transistor without patterning. (C) 2004 American Institute of Physics.

引用

页码：3558 / 3560

页数：3

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