Low-temperature polysilicon thin-film transistor driving with integrated driver for high-resolution light emitting polymer display

被引:134
作者
Kimura, M [1 ]
Yudasaka, I
Kanbe, S
Kobayashi, H
Kiguchi, H
Seki, S
Miyashita, S
Shimoda, T
Ozawa, T
Kitawada, K
Nakazawa, T
Miyazawa, W
Ohshima, H
机构
[1] Seiko Epson Corp, Base Technol Res Ctr, Owa Suwa 3928502, Japan
[2] Seiko Epson Corp, L Project, Owa Suwa 3928502, Japan
关键词
D O I
10.1109/16.808054
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A high-resolution low-temperature polysilicon thin-film transistor driven light emitting polymer display (LT p-Si TFT LEPD) with integrated drivers has been developed. We adopted conductance control of the TFT and optimized design and voltage in order to achieve good gray scale and simple pixel circuit, A p-channel TFT is used in order to guarantee reliability in de bias. An inter-layer reduces parasitic capacitance of bus lines, Because of the combination of the LT p-Si TFT and LEP, the display is thin, compact, and lightweight, as well as having low power consumption, wide viewing angle, and fast response.
引用
收藏
页码:2282 / 2288
页数:7
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