共 16 条
[1]
Differentiation of effects due to grain and grain boundary traps in laser annealed poly-Si thin film transistors
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS,
1998, 37 (4A)
:1721-1726
[2]
BRODY TP, 1997, INFORM DISPLAY, V10, P28
[5]
Dawson R. M. A., 1998, SID TECH DIG, V29, P11, DOI 10.1889/1.1833705
[6]
FRIEND RH, 1998, SID SEMINAR LECT NOT, V2, P1
[7]
New degradation phenomenon in wide channel poly-Si TFTs fabricated by low temperature process
[J].
IEDM - INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST 1996,
1996,
:781-784
[8]
Analysis of threshold voltage shift caused by bias stress in low temperature poly-Si TFTs
[J].
INTERNATIONAL ELECTRON DEVICES MEETING - 1997, TECHNICAL DIGEST,
1997,
:527-530
[9]
Inoue S., 1995, Proceedings of Fifteenth International Display Research Conference. Asia Display '95, P339
[10]
Kimura M., 1996, AM-LCD 96. Digest of Technical Papers. 1996 International Workshop on Active-Matrix Liquid-Crystal Displays in conjunction with IDW'96, P317