Amorphous silicon TFT-based active-matrix organic polymer LEDs

被引：7

作者：

Kim, JH

Hong, YT

Kanicki, J

机构：

[1] Univ Michigan, Solid State Elect Lab, Dept Elect Engn & Comp Sci, Ann Arbor, MI 48105 USA

[2] Univ Calif Santa Barbara, Ctr Polymers & Organ Solids, Santa Barbara, CA 93105 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2003年 / 24卷 / 07期

关键词：

active-matrix; amorphous silicon thin-film transistor; light-emitting diode;

D O I：

10.1109/LED.2003.814999

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report active-matrix organic polymer light-emitting displays (LEDs) based on a three hydrogenated amorphous silicon (a=Si:H) thin-film transistor (TFT) pixel electrode circuit that supplies a continuous output current to organic polymer light-emitting devices. The output current level drift induced by either process variations or device aging can be reduced in this design by adjusting the driver TFT operating point with the active resistor. Our first green light-emitting engineering prototype had a brightness of 120 cd/m(2) and fill factor of about 45%.

引用

页码：451 / 453

页数：3

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