Polymer hot-carrier transistor

被引：26

作者：

Chao, YC

Yang, SL

Meng, HF ^{[1
]}

Horng, SF

机构：

[1] Natl Chiao Tung Univ, Inst Phys, Hsinchu 300, Taiwan

[2] Natl Tsing Hua Univ, Dept Elect Engn, Hsinchu 300, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 25期

关键词：

D O I：

10.1063/1.2149219

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Metal-base hot-carrier transistor with conjugated polymer emitter and collector is demonstrated. The device is fabricated by multiple spin coating with the metal base sandwiched between two polymers. A thin insulating layer of LiF is inserted between the emitter and base to enhance the hot carrier kinetic energy and reduce mutual dissolution. Using poly(9-vinylcarbazole) as the emitter, Al as the base, and poly(3-hexylthiophene) as the collector, common-emitter current gain of 25 is obtained with operation voltage as low as 5 V.

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页码：1 / 3

页数：3

相关论文

共 16 条

[1]

[Anonymous], 2002, COMPLETE GUIDE SEMIC

[2] QUANTUM-MECHANICAL REFLECTION OF ELECTRONS AT METAL-SEMICONDUCTOR BARRIERS - ELECTRON TRANSPORT IN SEMICONDUCTOR-METAL-SEMICONDUCTOR STRUCTURES [J].

CROWELL, CR ;

SZE, SM .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (07) :2683-&

[3] ELECTRON-OPTICAL-PHONON SCATTERING IN EMITTER AND COLLECTOR BARRIERS OF SEMICONDUCTOR-METAL-SEMICONDUCTOR STRUCTURES [J].

CROWELL, CR ;

SZE, SM .

SOLID-STATE ELECTRONICS, 1965, 8 (12) :979-&

[4] Organic smart pixels [J].

Dodabalapur, A ;

Bao, Z ;

Makhija, A ;

Laquindanum, JG ;

Raju, VR ;

Feng, Y ;

Katz, HE ;

Rogers, J .

APPLIED PHYSICS LETTERS, 1998, 73 (02) :142-144

[5]

GEPPERT DV, 1962, P IRE, V50, P1527

[6] Patterning-free integration of polymer light-emitting diode and polymer transistor [J].

Li, ZL ;

Yang, SC ;

Meng, HF ;

Chen, YS ;

Yang, YZ ;

Liu, CH ;

Horng, SF ;

Hsu, CS ;

Chen, LC ;

Hu, JP ;

Lee, RH .

APPLIED PHYSICS LETTERS, 2004, 84 (18) :3558-3560

[7] Unique architecture and concept for high-performance organic transistors [J].

Ma, LP ;

Yang, Y .

APPLIED PHYSICS LETTERS, 2004, 85 (21) :5084-5086

[8] Organic bistable light-emitting devices [J].

Department of Materials Science and Engineering, University of California at Los Angeles, Los Angeles, CA 90095, United States .

Applied Physics Letters, 2002, 80 (03) :362-364

[9] Pseudo-metal-base transistor with high gain -: art. no. 263504 [J].

Meruvia, MS ;

Benvenho, ARV ;

Hümmelgen, IA ;

Pasa, AA ;

Schwarzacher, W .

APPLIED PHYSICS LETTERS, 2005, 86 (26) :1-3

[10] Organic-metal-semiconductor transistor with high gain [J].

Meruvia, MS ;

Hümmelgen, IA ;

Sartorelli, ML ;

Pasa, AA ;

Schwarzacher, W .

APPLIED PHYSICS LETTERS, 2004, 84 (20) :3978-3980