Organic double-gate field-effect transistors: Logic-AND operation

A unipolar double-gate field-effect transistor (DG-FET) with AND logic functionality is demonstrated. This operation regime arises through a symmetric electrostatic coupling of two conduction channels via the intrinsic semiconductor layer. According to simulation, this mode of operation is general and not limited to organic devices. These DG-FETs provide for two-signal modulation in a single device of a shared active region, and are thus versatile building blocks for logic, memories, sensing, data transmission and light-emitting FETs. When the two gates are tied together somewhat reminiscent of Si FinFETs, these devices can achieve considerably deeper gate modulation than possible with single gating.