Electrical peculiarities in Al/Si/Ge/... /Ge/Si and Al/SiGe/Si structures

被引：10

作者：

Horváth, ZJ

Jarrendähl, K

Adám, M

Szabó, I

Van Tuyen, V

Czigány, Z

机构：

[1] Hungarian Acad Sci, Res Inst Tech Phys & Mat Sci, H-1525 Budapest 114, Hungary

[2] Linkoping Univ, Dept Phys, S-58183 Linkoping, Sweden

来源：

APPLIED SURFACE SCIENCE | 2002年 / 190卷 / 1-4期

关键词：

Si; SiGe; Schottky barrier; superlattice; amorphous; electrical behaviour;

D O I：

10.1016/S0169-4332(01)00905-9

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The current-voltage (I-V) and capacitance-voltage (C-V) behaviour of different Si/Ge multilayers and SiGe single layers prepared on p-type Si substrates by magnetron sputtering and annealing, has been studied in the temperature rang, of 80-320 K by using Al Schottky contacts as test structures. Although a significant influence of the microstructure of the Si/Ge multilayers and SiGe layers was obtained on the electrical behaviour of the structures, the structures exhibited similar specific features. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：403 / 407

页数：5

共 10 条

[1] Capacitance-voltage characteristic of anisotype heterojunction in the presence of interface states and series resistance [J].