Thickness dependence of the mobility at the LaAlO3/SrTiO3 interface

被引：93

作者：

Bell, C. ^{[1
,2
]}

Harashima, S. ^{[1
]}

Hikita, Y. ^{[1
]}

Hwang, H. Y. ^{[1
,2
]}

机构：

[1] Univ Tokyo, Dept Adv Mat Sci, Chiba 2778651, Japan

[2] Japan Sci & Technol Agcy, Kawaguchi, Saitama 3320012, Japan

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 22期

关键词：

carrier mobility; electrical resistivity; electron gas; interface structure; lanthanum compounds; magnetoresistance; strontium compounds; OXIDES; STATE;

D O I：

10.1063/1.3149695

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electronic transport properties of a series of LaAlO3/SrTiO3 interfaces were investigated, and a systematic thickness dependence of the sheet resistance and magnetoresistance was found for constant growth conditions. This trend occurs above the critical thickness of four unit cells, below which the LaAlO3/SrTiO3 interface is not conducting. A dramatic decrease in mobility of the electron gas of nearly two orders of magnitude was observed with increasing LaAlO3 thickness from 5 to 25 unit cells.

引用

页数：3

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