Thermoelectric properties of Bi2Te3 material obtained by the ultrarapid quenching process route

被引：35

作者：

Koukharenko, E

Fréty, N

Shepelevich, VG

Tedenac, JC

机构：

[1] Univ Montpellier 2, LPMC, UMR 5617, F-34095 Montpellier 5, France

[2] Belarusian State Univ, Dept Phys, Minsk 220080, BELARUS

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2000年 / 299卷 / 1-2期

关键词：

bismuth telluride; ultrarapid quenching; microstructure; thermoelectric properties;

D O I：

10.1016/S0925-8388(99)00688-X

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Bismuth telluride materials were fabricated by ultrarapid quenching. Foils are obtained with a thickness varying from 10 to 60 mu m The thermoelectric properties were determined measuring electrical resistivity, Seebeck coefficient and Hall coefficient. The influence of quenching temperature and heat treatment on the Seebeck coefficient was studied. The variation of thermoelectric properties with temperature was also studied. N-type degenerated materials were obtained with a carrier concentration of 10(29) m(-3). (C) 2000 Elsevier Science S.A. All rights reserved.

引用

页码：254 / 257

页数：4

共 18 条

[1]

BOIKOV OS, 1991, FIZ TVERD TELA, V32, P3440

[2]

Boltaks B.I., 1972, Diffusion and Point Defects in Semiconductors, P384

[3] Preparation and characterization of MOCVD bismuth telluride thin films [J].