Preparation and characterization of MOCVD bismuth telluride thin films

被引：42

作者：

Boulouz, A ^{[1
]}

Giani, A ^{[1
]}

Pascal-Delannoy, F ^{[1
]}

Boulouz, M ^{[1
]}

Foucaran, A ^{[1
]}

Boyer, A ^{[1
]}

机构：

[1] Univ Montpellier 2, Ctr Elect & Microoptoelect Montpellier, UMR CNRS 5507, F-34095 Montpellier 05, France

来源：

JOURNAL OF CRYSTAL GROWTH | 1998年 / 194卷 / 3-4期

关键词：

Bi2Te3; MOCVD; seebeck coefficient; hall mobility and resistivity;

D O I：

10.1016/S0022-0248(98)00690-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The thermoelectric, electric and structural properties of Bi2Te3 thin films grown by MOCVD have been investigated. The Seebeck coefficient shows that all the samples were n-type conductors decreasing from 213 to 129 mu V/K when the carrier concentration increases from 9 x 10(19) to 3 x 10(20) Cm-3. For high substrate temperature, good orientation of crystallites has been observed which can be directly related to the best values of Seebeck coefficient found. Hall effect has been studied in the temperature range from 110 to 450 K. The temperature dependence of the Hall mobility is found to be T-l indicating lattice scattering. The good quality of Bi,Te, thin films growth by MOCVD observed allow to confirm the high potential of these deposition method which can be turned to be suitable for growing thin films for thermoelectrical material production. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：336 / 341

页数：6

共 13 条

[1] Bi2Te3 thin films grown by MOCVD process
Boulouz, A
Giani, A
Pascal-Delannoy, F
Foucaran, A
Boyer, A
[J]. PROCEEDINGS ICT'97 - XVI INTERNATIONAL CONFERENCE ON THERMOELECTRICS, 1997, : 167 - 170
[2] PROPERTIES OF THIN-FILM THERMOELECTRIC-MATERIALS - APPLICATION TO SENSORS USING THE SEEBECK EFFECT
BOYER, A
CISSE, E
[J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1992, 13 (02): : 103 - 111
[3] Flash evaporated layers of (Bi2Te3-Bi2Se3)(N) and (Bi2Te3-Sb2Te3)(P)
Foucaran, A
Sackda, A
Giani, A
Pascal-Delannoy, F
Boyer, A
[J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1998, 52 (2-3): : 154 - 161
[4] CRYSTAL GROWTH + ORIENTATION IN SPUTTERED FILMS OF BISMUTH TELLURIDE
FRANCOMBE, MH
[J]. PHILOSOPHICAL MAGAZINE, 1964, 10 (108): : 989 - &
[5] PREPARATION AND PROPERTIES OF CO-EVAPORATED BISMUTH TELLURIDE [BI2TE3] THIN-FILMS
GEORGE, J
PRADEEP, B
[J]. SOLID STATE COMMUNICATIONS, 1985, 56 (01) : 117 - 120
[6] Elaboration of Bi2Te3 by metal organic chemical vapor deposition
Giani, A
PascalDelannoy, F
Boyer, A
Foucaran, A
Gschwind, M
Ancey, P
[J]. THIN SOLID FILMS, 1997, 303 (1-2) : 1 - 3
[7] MOCVD growth of Bi2Te3 layers using diethyltellurium as a precursor
Giani, A
Boulouz, A
Pascal-Delannoy, F
Foucaran, A
Boyer, A
[J]. THIN SOLID FILMS, 1998, 315 (1-2) : 99 - 103
[8] Structural and electrical characterization of thin Bi2Te3 films grown with MBE
Kikuchi, S
Iwata, Y
Hatta, E
Nagao, J
Mukasa, K
[J]. PROCEEDINGS ICT'97 - XVI INTERNATIONAL CONFERENCE ON THERMOELECTRICS, 1997, : 97 - 100
[9] Electronic structure and thermoelectric properties of bismuth telluride and bismuth selenide
Mishra, SK
Satpathy, S
Jepsen, O
[J]. JOURNAL OF PHYSICS-CONDENSED MATTER, 1997, 9 (02) : 461 - 470
[10] EVALUATION OF ANISOTROPIC THERMOELECTRICITY OF SINTERED BI2TE3 ON THE BASIS OF THE ORIENTATION DISTRIBUTION OF CRYSTALLITES
OHSUGI, IJ
KOJIMA, T
SAKATA, M
YAMANASHI, M
NISHIDA, IA
[J]. JOURNAL OF APPLIED PHYSICS, 1994, 76 (04) : 2235 - 2239

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