MOCVD growth of Bi2Te3 layers using diethyltellurium as a precursor

被引：60

作者：

Giani, A ^{[1
]}

Boulouz, A ^{[1
]}

Pascal-Delannoy, F ^{[1
]}

Foucaran, A ^{[1
]}

Boyer, A ^{[1
]}

机构：

[1] Univ Montpellier 2, Ctr Elect & Microoptoelect Montpellier, CNRS, UMR 5507, F-34095 Montpellier 05, France

来源：

THIN SOLID FILMS | 1998年 / 315卷 / 1-2期

关键词：

chemical vapour deposition (CVD); bismuth; tellurium; alloys;

D O I：

10.1016/S0040-6090(97)00792-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The growth of Bi2Te3 thin films by metal organic chemical vapour deposition (MOCVD) using diethytellurium and trimethylbismuth as tellurium and bismuth sources respectively is investigated on pyrex substrates. The results of growth rate, morphology, electrical and thermoelectrical properties as a function of growth parameters are given. The prepared films were always n-type. Film properties, such as electrical resistivity, mobility, carrier concentration, thermoelectric power and X-ray diffraction were studied at 300 K. for VI/V ratio greater than 6, we found an electrical resistivity lower than 9 mu Omega.m and a thermoelectrical power equal to 210 mu V/K. Hall mobility varies from 28 and 150 cm(2)/V.s. These initial results suggest a significant potential of MOCVD growth for large-scale production of thermoelectric material. (C) 1998 Elsevier Science S.A.

引用

页码：99 / 103

页数：5

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