Relaxation of shallow donor electron spin due to interaction with nuclear spin bath

被引:30
作者
Saykin, S
Mozyrsky, D
Privman, V [1 ]
机构
[1] Clarkson Univ, Ctr Quantum Device Technol, Potsdam, NY 13699 USA
[2] Kazan VI Lenin State Univ, Dept Theoret Phys, Kazan 420008, Russia
[3] Los Alamos Natl Lab, CNLS, Los Alamos, NM 87545 USA
关键词
D O I
10.1021/nl0255552
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We study the low-temperature dynamics of a shallow donor, e.g., P-31, impurity electron spin in silicon, interacting with the bath of nuclear spins of the Si-29 isotope. For small applied magnetic fields, the electron spin relaxation is controlled by the steady-state distribution of the nuclear spins. We calculate the relaxation times T-1 and T-2 as functions of the external magnetic field and conclude that nuclear spins play an important role in the donor electron spin decoherence in SI;P at low magnetic fields.
引用
收藏
页码:651 / 655
页数:5
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