Growth and characterisation of monoclinic KGd1-xREx(WO4)2 single crystals

被引：47

作者：

Pujol, C ^{[1
]}

Aguiló, M

Díaz, F

Zaldo, C

机构：

[1] Univ Rovira & Virgili, Lab Fis Aplicada & Cristallog, Tarragona 43005, Spain

[2] Inst Ciencias Mat Madrid, CSIC, Madrid 28049, Spain

来源：

OPTICAL MATERIALS | 1999年 / 13卷 / 01期

关键词：

D O I：

10.1016/S0925-3467(99)00008-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The high-temperature solution growth of KGd(WO4)(2) single crystals doped with trivalent rare earth (RE3+) ions has been investigated by using the top seeded solution growth (TSSG) technique and K2W2O7 as solvent. Electron probe microanalyses were used to determine the RE concentration in the crystals grown. For the 1% doping level in the melt the distribution coefficients of Nd, Er, Ho and Tm are in the 0.8-1.1 range. Yb and Pr have smaller distribution coefficients of 0.7 and 0.5, respectively. The crystal field splittings, of the Ho3+, Er3+ and Yb3+ electronic multiplets have been determined at 4.2 K. Some evidence of the presence of several Yb3+ centres has been obtained. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：33 / 40

页数：8

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