Exact bond ordered ground state for the transition between the band and the Mott insulator

被引:60
作者
Batista, CD [1 ]
Aligia, AA
机构
[1] Los Alamos Natl Lab, Ctr Nonlinear Studies, Los Alamos, NM 87545 USA
[2] Los Alamos Natl Lab, Div Theoret, Los Alamos, NM 87545 USA
[3] Ctr Atom Bariloche, RA-8400 San Carlos De Bariloche, Rio Negro, Argentina
[4] Comis Nacl Energia Atom, Inst Balseiro, RA-8400 San Carlos De Bariloche, Rio Negro, Argentina
关键词
D O I
10.1103/PhysRevLett.92.246405
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We derive an effective Hamiltonian H-eff for an ionic Hubbard chain, valid for t<<U,Delta, where t is the hopping, U is the Coulomb repulsion, and Delta is the charge-transfer energy. H-eff is the minimal model for describing the transition between the band insulator (BI) (Delta-U>>t) and the Mott insulator (MI) (U-Delta>>t). Using spin-particle transformations [Phys. Rev. Lett. 86, 1082 (2001)], we map H-eff(U=Delta) into an SU(3) antiferromagnetic Heisenberg model whose exact ground state is known. In this way, we show rigorously that a spontaneously dimerized insulating ferroelectric phase appears in the transition region between the BI and the MI.
引用
收藏
页码:246405 / 1
页数:4
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