Water contact angles of vertically aligned Si nanorod arrays

被引:74
作者
Fan, JG [1 ]
Tang, XJ [1 ]
Zhao, YP [1 ]
机构
[1] Univ Georgia, Dept Phys & Astron, Nanoscale Sci & Engn Ctr, Athens, GA 30602 USA
关键词
D O I
10.1088/0957-4484/15/5/017
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The equilibrium water contact angles of vertically aligned nanorod Si films were measured by the sessile drop method. For as-deposited hydrophilic films, there was a contact angle transition from a rough surface to a 'hemi-wicking' porous surface at normal film thickness d = 500 nm; while for the HF treated hydrophobic films, a transition from a partially composite to a composite surface was observed at the same film thickness. The observed results can be reasonably interpreted within the framework of the classical Young theory.
引用
收藏
页码:501 / 504
页数:4
相关论文
共 21 条
  • [1] Adamson A.W., 1967, Physical chemistry of surfaces
  • [2] [Anonymous], 2000, Characterization of Amorphous and Crystalline Rough Surface--Principles and Applications
  • [3] Pearl drops
    Bico, J
    Marzolin, C
    Quéré, D
    [J]. EUROPHYSICS LETTERS, 1999, 47 (02): : 220 - 226
  • [4] Rough wetting
    Bico, J
    Tordeux, C
    Quéré, D
    [J]. EUROPHYSICS LETTERS, 2001, 55 (02): : 214 - 220
  • [5] Wetting of textured surfaces
    Bico, J
    Thiele, U
    Quéré, D
    [J]. COLLOIDS AND SURFACES A-PHYSICOCHEMICAL AND ENGINEERING ASPECTS, 2002, 206 (1-3) : 41 - 46
  • [6] Ultrahydrophobic and ultralyophobic surfaces:: Some comments and examples
    Chen, W
    Fadeev, AY
    Hsieh, MC
    Öner, D
    Youngblood, J
    McCarthy, TJ
    [J]. LANGMUIR, 1999, 15 (10) : 3395 - 3399
  • [7] Surface roughening in shadowing growth and etching in 2+1 dimensions
    Drotar, JT
    Zhao, YP
    Lu, TM
    Wang, GC
    [J]. PHYSICAL REVIEW B, 2000, 62 (03): : 2118 - 2125
  • [8] Feng L, 2002, ANGEW CHEM INT EDIT, V41, P1221, DOI 10.1002/1521-3773(20020402)41:7<1221::AID-ANIE1221>3.0.CO
  • [9] 2-G
  • [10] Roughness-induced non-wetting
    Herminghaus, S
    [J]. EUROPHYSICS LETTERS, 2000, 52 (02): : 165 - 170