Surface roughening in shadowing growth and etching in 2+1 dimensions

被引:133
作者
Drotar, JT [1 ]
Zhao, YP [1 ]
Lu, TM [1 ]
Wang, GC [1 ]
机构
[1] Rensselaer Polytech Inst, Dept Phys Appl Phys & Astron, Troy, NY 12180 USA
来源
PHYSICAL REVIEW B | 2000年 / 62卷 / 03期
关键词
D O I
10.1103/PhysRevB.62.2118
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Through numerical calculations and Monte Carlo simulations, we examine the roughening behavior of a shadowing model, with lateral growth, for (2+1)-dimensional systems. The results show that the roughening growth exponent beta=1 for growth and beta=0 for etching. For the Monte Carlo simulation of the growth model, tall columns are formed, and the correlation length obeys xi proportional to(t-t(0))(1/z), with 1/z=0.93+/-0.1. For the Monte Carlo simulation of the etching model, we obtain 1/z=0, and the height-height correlation function N(r) is proportional to log(r) for r<<xi. The results are compared to previous computational studies of shadowing and to experimental studies of sputter deposition.
引用
收藏
页码:2118 / 2125
页数:8
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