Surface roughening during low-temperature Si epitaxial growth on singular vs vicinal Si(001) substrates

被引:62
作者
Lee, NE
Cahill, DG
Greene, JE
机构
[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
[2] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
来源
PHYSICAL REVIEW B | 1996年 / 53卷 / 12期
关键词
D O I
10.1103/PhysRevB.53.7876
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The evolution of surface roughness on epitaxial Si films grown at 300 degrees C by ultrahigh vacuum ion-beam sputter deposition onto nominally similar, [100]-, and [110]-miscut Si(001) is inconsistent with conventional scaling and hyperscaling laws for kinetic roughening. Unstable growth leading to the formation of mounds separated by a well-defined length scale is observed on all substrates. Contrary to previous high-temperature growth results, the presence of steps during deposition at 300 degrees C increases the tendency toward unstable growth resulting in a much earlier development of mound structures and larger surface roughness on vicinal substrates.
引用
收藏
页码:7876 / 7879
页数:4
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