Exciton spin polarization in magnetic semiconductor quantum wires

Electron-beam lithography and wet etching techniques are used to laterally pattern ZnSe/(Zn,Cd,Mn)Se single quantum wells into magnetically active quantum wires with widths ranging from 20 to 80 nm. Photoluminescence spectroscopy as a function of wire width reveals a competition between elastic strain relaxation and quantum confinement. Magnetophotoluminescence measurements at low temperatures indicate a strong exciton spin polarization due to the sp-d exchange-enhanced spin splitting, ranging from 20% to 60% at 4 T. (C) 2000 American Institute of Physics. [S0003-6951(00)01409-1].