Ion-beam-produced damage and its stability in AlN films

被引：63

作者：

Kucheyev, SO

Williams, JS

Zou, J

Jagadish, C

Pophristic, M

Guo, S

Ferguson, IT

Manasreh, MO

机构：

[1] Australian Natl Univ, Res Sch Phys Sci & Engn, Dept Elect Mat Engn, Canberra, ACT 0200, Australia

[2] Univ Sydney, Australian Key Ctr Microscopy & Microanal, Sydney, NSW 2006, Australia

[3] EMCORE Corp, Somerset, NJ 08873 USA

[4] Univ New Mexico, Dept Elect & Comp Engn, Albuquerque, NM 87131 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2002年 / 92卷 / 07期

关键词：

D O I：

10.1063/1.1501746

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Structural characteristics of single-crystal wurtzite AlN epilayers (grown on sapphire substrates) bombarded with 300 keV Au-197(+) ions at room and liquid-nitrogen temperatures (RT and LN2) are studied by a combination of Rutherford backscattering/channeling spectrometry and cross-sectional transmission electron microscopy. Results reveal extremely strong dynamic annealing of ion-beam-generated defects in AlN. Lattice amorphization is not observed even for very large doses of keV heavy ions at LN2. An increase in irradiation temperature from LN2 to RT has a relatively small effect on the production of stable structural damage in AlN. In contrast to the case of AlxGa1-xN with xless than or equal to0.6, neither damage saturation in the crystal bulk (below the random level) nor preferential surface disordering is revealed for AlN. Results also show that structural lattice disorder produced in AlN by high-dose keV heavy-ion bombardment is stable to rapid thermal annealing at temperatures as high as 1000 degreesC. (C) 2002 American Institute of Physics.

引用

页码：3554 / 3558

页数：5

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