Atomic layer deposition to fine-tune the surface properties and diameters of fabricated nanopores

被引：357

作者：

Chen, P

Mitsui, T

Farmer, DB

Golovchenko, J

Gordon, RG

Branton, D ^{[1
]}

机构：

[1] Harvard Univ, Dept Mol & Cellular Biol, Dept Phys, Div Engn & Appl Sci, Cambridge, MA 02138 USA

[2] Harvard Univ, Dept Chem & Chem Biol, Cambridge, MA 02138 USA

来源：

NANO LETTERS | 2004年 / 4卷 / 07期

关键词：

D O I：

10.1021/nl0494001

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Atomic layer deposition of alumina enhanced the molecule sensing characteristics of fabricated nanopores by fine-tuning their surface properties, reducing 1/f noise, neutralizing surface charge to favor capture of DNA and other negative polyelectrolytes, and controlling the diameter and aspect ratio of the pores with near single Angstrom precision. The control over the chemical and physical nature of the pore surface provided by atomic layer deposition produced a higher yield of functional nanopore detectors.

引用

页码：1333 / 1337

页数：5

共 23 条

[1] Fluctuation of surface charge in membrane pores
Bashford, CL
Alder, GM
Pasternak, CA
[J]. BIOPHYSICAL JOURNAL, 2002, 82 (04) : 2032 - 2040
[2] Stochastic sensors inspired by biology
Bayley, H
Cremer, PS
[J]. NATURE, 2001, 413 (6852) : 226 - 230
[3] Permeation through an open channel: Poisson-Nernst-Planck theory of a synthetic ionic channel
Chen, D
Lear, J
Eisenberg, B
[J]. BIOPHYSICAL JOURNAL, 1997, 72 (01) : 97 - 116
[4] LOW-FREQUENCY FLUCTUATIONS IN SOLIDS - 1-F NOISE
DUTTA, P
HORN, PM
[J]. REVIEWS OF MODERN PHYSICS, 1981, 53 (03) : 497 - 516
[5] A SINGLE NEGATIVE CHARGE WITHIN THE PORE REGION OF A CGMP-GATED CHANNEL CONTROLS RECTIFICATION, CA2+ BLOCKAGE, AND IONIC SELECTIVITY
EISMANN, E
MULLER, F
HEINEMANN, SH
KAUPP, UB
[J]. PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA, 1994, 91 (03) : 1109 - 1113
[6] Properties of electrolyte-filled glass microelectrodes:: an experimental study
Fåhraeus, C
Borglid, K
Grampp, W
[J]. JOURNAL OF NEUROSCIENCE METHODS, 1997, 78 (1-2) : 15 - 28
[7] A kinetic model for step coverage by atomic layer deposition in narrow holes or trenches
Gordon, RG
Hausmann, D
Kim, E
Shepard, J
[J]. CHEMICAL VAPOR DEPOSITION, 2003, 9 (02) : 73 - 78
[8] Rapid vapor deposition of highly conformal silica nanolaminates
Hausmann, D
Becker, J
Wang, SL
Gordon, RG
[J]. SCIENCE, 2002, 298 (5592) : 402 - 406
[9] Atomic layer deposition of hafnium and zirconium oxides using metal amide precursors
Hausmann, DM
Kim, E
Becker, J
Gordon, RG
[J]. CHEMISTRY OF MATERIALS, 2002, 14 (10) : 4350 - 4358
[10] SEQUENTIAL SURFACE CHEMICAL-REACTION LIMITED GROWTH OF HIGH-QUALITY AL2O3 DIELECTRICS
HIGASHI, GS
FLEMING, CG
[J]. APPLIED PHYSICS LETTERS, 1989, 55 (19) : 1963 - 1965

← 1 2 3 →