Hole diffusion profile in a p-p+ silicon homojunction determined by terahertz and midinfrared spectroscopic ellipsometry

被引：19

作者：

Hofmann, T. ^{[1
,2
]}

Herzinger, C. M. ^{[3
]}

Tiwald, T. E. ^{[3
]}

Woollam, J. A. ^{[3
]}

Schubert, M. ^{[1
,2
]}

机构：

[1] Univ Nebraska, Dept Elect Engn, Lincoln, NE 68588 USA

[2] Univ Nebraska, Nebraska Ctr Mat & Nanosci, Lincoln, NE 68588 USA

[3] JA Woollam Co Inc, Lincoln, NE 68508 USA

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 03期

基金：

美国国家科学基金会;

关键词：

diffusion; effective mass; elemental semiconductors; ellipsometry; hole density; infrared spectra; polarisation; semiconductor junctions; silicon; terahertz spectroscopy; TIME-DOMAIN SPECTROSCOPY; P-TYPE GAAS; DOPED SILICON; THZ;

D O I：

10.1063/1.3184567

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Noninvasive optical measurement of hole diffusion profiles in p-p(+) silicon homojunction is reported by ellipsometry in the terahertz (0.2-1.5 THz) and midinfrared (9-50 THz) spectral regions. In the terahertz region a surface-guided wave resonance with transverse-electrical polarization is observed at the boundary of the p-p(+) homojunction, and which is found to be extremely sensitive to the low-doped p-type carrier concentration as well as to the hole diffusion profile within the p-p(+) homojunction. Effective mass approximations allow determination of homojunction hole concentrations as p=2.9x10(15) cm(-3), p(+)=5.6x10(18) cm(-3), and diffusion time constant Dt=7.7x10(-3) mu m(2), in agreement with previous electrical investigations.

引用

页数：3

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