ELECTRICAL CHARACTERIZATION TO 4 THZ OF N-TYPE AND P-TYPE GAAS USING THZ TIME-DOMAIN SPECTROSCOPY

被引:121
作者
KATZENELLENBOGEN, N
GRISCHKOWSKY, D
机构
[1] IBM Watson Research Center, Yorktown Heights, NY 10598
关键词
D O I
10.1063/1.107762
中图分类号
O59 [应用物理学];
学科分类号
摘要
Using a high-performance optoelectronic THz beam system for time-domain spectroscopy, we have measured the absorption and index of refraction of N- and P-type doped GaAs from low frequencies to 4 THz. From these measurements the complex conductance was obtained over the same frequency range. All of the results were well fit by Drude theory.
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页码:840 / 842
页数:3
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