ELECTRICAL CHARACTERIZATION TO 4 THZ OF N-TYPE AND P-TYPE GAAS USING THZ TIME-DOMAIN SPECTROSCOPY

被引：121

作者：

KATZENELLENBOGEN, N

GRISCHKOWSKY, D

机构：

[1] IBM Watson Research Center, Yorktown Heights, NY 10598

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 07期

关键词：

D O I：

10.1063/1.107762

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Using a high-performance optoelectronic THz beam system for time-domain spectroscopy, we have measured the absorption and index of refraction of N- and P-type doped GaAs from low frequencies to 4 THz. From these measurements the complex conductance was obtained over the same frequency range. All of the results were well fit by Drude theory.

引用

页码：840 / 842

页数：3

共 8 条

[1] SUBMILLIMETER FAR-IR SPECTROSCOPY IN LIQUID AND SOLID STATES WITH A TUNABLE OPTICALLY PUMPED LASER
BEAN, BL
PERKOWITZ, S
[J]. JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1977, 67 (07) : 911 - 914
[2] INFRARED TECHNIQUES FOR SEMICONDUCTOR CHARACTERIZATION
BLACK, JF
LANNING, E
PERKOWITZ, S
[J]. INFRARED PHYSICS, 1970, 10 (02): : 125 - +
[3] FAR-INFRARED TIME-DOMAIN SPECTROSCOPY WITH TERAHERTZ BEAMS OF DIELECTRICS AND SEMICONDUCTORS
GRISCHKOWSKY, D
KEIDING, S
VANEXTER, M
FATTINGER, C
[J]. JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS, 1990, 7 (10) : 2006 - 2015
[4] GRISCHKOWSKY D, 1991, PICOSECOND ELECT OPT, V9, P9
[5] EFFICIENT GENERATION OF 380 FS PULSES OF THZ RADIATION BY ULTRAFAST LASER-PULSE EXCITATION OF A BIASED METAL-SEMICONDUCTOR INTERFACE
KATZENELLENBOGEN, N
GRISCHKOWSKY, D
[J]. APPLIED PHYSICS LETTERS, 1991, 58 (03) : 222 - 224
[6] FAR INFRARED FREE-CARRIER ABSORPTION IN N-TYPE GALLIUM ARSENIDE
PERKOWITZ, S
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1971, 32 (10) : 2267 - +
[7] CARRIER DYNAMICS OF ELECTRONS AND HOLES IN MODERATELY DOPED SILICON
VANEXTER, M
GRISCHKOWSKY, D
[J]. PHYSICAL REVIEW B, 1990, 41 (17): : 12140 - 12149
[8] OPTICAL AND ELECTRONIC-PROPERTIES OF DOPED SILICON FROM 0.1 TO 2 THZ
VANEXTER, M
GRISCHKOWSKY, D
[J]. APPLIED PHYSICS LETTERS, 1990, 56 (17) : 1694 - 1696

← 1 →