Adhesion of electroless nickel plating on polished silicon

被引：9

作者：

Karmalkar, S ^{[1
]}

Marjorie, R ^{[1
]}

Sumithra, VG ^{[1
]}

机构：

[1] Indian Inst Technol, Dept Elect Engn, Chennai 600036, India

来源：

JOURNAL OF ADHESION SCIENCE AND TECHNOLOGY | 2002年 / 16卷 / 11期

关键词：

electroless nickel; polished silicon; activation; adhesion;

D O I：

10.1163/156856102320252921

中图分类号：

TQ [化学工业];

学科分类号：

0817 ;

摘要：

This work reports a study of the adhesion of electroless nickel plating on polished silicon as a function of several plating variables, namely substrate resistivity, activator composition, plating duration, and plating bath temperature. It is shown that an adhesion strength of similar to100 kg/cm(2) or more can be obtained, irrespective of the silicon doping, for plating used in semiconductor devices. However, for this purpose, an appropriate silicon activation step is essential, except when the silicon is heavily N-type doped.

引用

页码：1501 / 1507

页数：7

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