Current-voltage characteristics of poly(3-hexylthiophene) diodes at room temperature

被引：25

作者：

Giulianini, Michele ^{[1
]}

Waclawik, Eric R. ^{[2
]}

Bell, John M. ^{[1
]}

Motta, Nunzio ^{[1
]}

机构：

[1] Queensland Univ Technol, Sch Engn Syst, Brisbane, Qld 4001, Australia

[2] Queensland Univ Technol, Sch Phys & Chem Sci, Brisbane, Qld 4001, Australia

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 08期

关键词：

carrier mobility; energy gap; localised states; organic semiconductors; Schottky effect; semiconductor diodes; space charge; CHARGE-LIMITED CURRENTS; STATES; DISTRIBUTIONS; INSULATOR;

D O I：

10.1063/1.3086882

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the analysis of current-voltage characteristics of regioregular poly(3-hexylthiophene) diodes. Experimental curves were fitted to two models, to take into account at low-moderate electric fields Schottky behavior mixed with space charge limited current (SCLC) regime and, at higher fields, trap-free SCLC. The results provide a description of IV curves over five decades, along with the determination of zero field and effective mobility and the field dependence prefactor. Forward and reverse IV measurements highlighted the presence of shallow and deep localized states inside the band gap. The latter enhance the current over time and have been modeled as an inductorlike element.

引用

页数：3

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