Auger-type excitation and de-excitation processes in rare earth and transition metal doped semiconductors

被引：20

作者：

Godlewski, M ^{[1
]}

Zakrzewski, AJ ^{[1
]}

Ivanov, VY ^{[1
]}

机构：

[1] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2000年 / 300卷

关键词：

semiconductors; impurities in semiconductors; recombination and trapping; optical properties; electron paramagnetic resonance; luminescence;

D O I：

10.1016/S0925-8388(99)00708-2

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Processes of indirect excitation of rare earth and transition metal ions are reviewed. We describe Auger-type processes, in which one of the interacting centres is ionised. We show that such Auger-type processes are often very efficient and result in indirect excitation of rare earth (transition metal) emission. (C) 2000 Elsevier Science S.A. All rights reserved.

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页码：23 / 31

页数：9

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