Mobility enhancement in strained si NMOSFETs with HfO2 gate dielectrics

被引：42

作者：

Rim, K ^{[1
]}

Gusev, EP ^{[1
]}

D'Emic, C ^{[1
]}

Kanarsky, T ^{[1
]}

Chen, H ^{[1
]}

Chu, J ^{[1
]}

Ott, J ^{[1
]}

Chan, K ^{[1
]}

Boyd, D ^{[1
]}

Mazzeo, V ^{[1
]}

Lee, BH ^{[1
]}

Mocuta, A ^{[1
]}

Welser, J ^{[1
]}

Cohen, SL ^{[1
]}

Ieong, M ^{[1
]}

Wong, HS ^{[1
]}

机构：

[1] IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA

来源：

2002 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS | 2002年

关键词：

D O I：

10.1109/VLSIT.2002.1015368

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Integration of strained Si and high-K gate dielectric is demonstrated for the first time. While providing a >1000x gate leakage reduction. strained Si NMOSFETs with HfO2 gate dielectric exhibit 60% higher mobility than the unstrained Si device with HfO2, gate dielectrics, and 30% higher mobility than the conventional Si NMOSFETs with SiO2 gate dielectric (universal MOSFET mobility).

引用

页码：12 / 13

页数：2

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