Ultradeep, low-damage dry etching of SiC

被引：50

作者：

Cho, H ^{[1
]}

Leerungnawarat, P

Hays, DC

Pearton, SJ

Chu, SNG

Strong, RM

Zetterling, CM

Östling, M

Ren, F

机构：

[1] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

[2] Bell Labs, Murray Hill, NJ 07974 USA

[3] Northrop Grumman, Pittsburgh, PA 15235 USA

[4] Royal Inst Technol, Dept Elect, S-16428 Kista, Sweden

[5] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 06期

关键词：

D O I：

10.1063/1.125879

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The Schottky barrier height (Phi(B)) and reverse breakdown voltage (V-B) of Au/n-SiC diodes were used to examine the effect of inductively coupled plasma SF6/O-2 discharges on the near-surface electrical properties of SiC. For low ion energies (less than or equal to 60 eV) in the discharge, there is minimal change in Phi(B) and V-B, but both parameters degrade at higher energies. Highly anisotropic features typical of through-wafer via holes were formed in SiC using an Al mask. (C) 2000 American Institute of Physics. [S0003-6951(00)02606-1].

引用

页码：739 / 741

页数：3

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