Cubic boron nitride deposition on silicon substrates at room temperature by KrF excimer laser ablation of h-BN

被引：6

作者：

Acquaviva, S ^{[1
]}

Leggieri, G

Luches, A

Perrone, A

Zocco, A

Laidani, N

Speranza, G

Anderle, M

机构：

[1] INFM, I-73100 Lecce, Italy

[2] Univ Lecce, Dipartimento Fis, I-73100 Lecce, Italy

[3] IRST, ITC, Div Fis Chim Superfici & Interfacce, I-38050 Trent, Italy

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2000年 / 70卷 / 02期

关键词：

D O I：

10.1007/s003390050032

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A hexagonal-BN target was ablated by high-fluence (6 and 12 J/cm(2)) KrF excimer laser pulses in low-pressure (5 Pa) N-2 atmosphere, without any aid of ion bombardment and heating of the Si substrate. Investigations of the deposited films show that the cubic-BN phase was deposited. The film deposited at 6 J/cm(2) appears to contain a higher cubic phase content with respect to the one deposited at 12 J/cm(2).

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页码：197 / 201

页数：5

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