学术探索
学术期刊
新闻热点
数据分析
智能评审

Influence of the valence-band offset on gain and absorption in GaNAs/GaAs quantum well lasers

被引：39
作者：
Hader, J
Koch, SW
Moloney, JV
O'Reilly, EP
机构：
[1] Univ Marburg, Dept Phys, D-35032 Marburg, Germany
[2] Univ Marburg, Ctr Mat Sci, D-35032 Marburg, Germany
[3] Univ Arizona, Arizona Ctr Math Sci, Tucson, AZ 85721 USA
[4] Univ Surrey, Dept Phys, Guildford GU2 5XH, Surrey, England
来源：
APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 25期
关键词：
D O I：
10.1063/1.126749
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The dependence of the gain and absorption in GaNAs/GaAs quantum well lasers on the valence-band offset is investigated. The calculated absorption strength, gain amplitudes, and gain bandwidth are found to depend crucially on the value of this offset. The shift of the peak gain transition energy with carrier density is shown to depend strongly on the magnitude of the offset, providing what should be a useful means to determine the offset experimentally. (C) 2000 American Institute of Physics. [S0003-6951(00)04225-X].
引用
收藏
页码：3685 / 3687
页数：3
相关论文
共 17 条
[1]   Calculation of quantum well laser gain spectra [J].
Chow, WW ;
Girndt, A ;
Koch, S .
OPTICS EXPRESS, 1998, 2 (04) :119-124
[2]  
Ellmers C, 1998, PHYS STATUS SOLIDI B, V206, P407, DOI 10.1002/(SICI)1521-3951(199803)206:1<407::AID-PSSB407>3.0.CO
[3]  
2-X
[4]  
Girndt AA, 1997, PHYS STATUS SOLIDI B, V202, P725, DOI 10.1002/1521-3951(199708)202:2<725::AID-PSSB725>3.0.CO
[5]  
2-K
[6]   Microscopic theory of gain, absorption, and refractive index in semiconductor laser materials influence of conduction-band nonparabolicity and Coulomb-induced intersubband coupling [J].
Hader, J ;
Moloney, JV ;
Koch, SW .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1999, 35 (12) :1878-1886
[7]   Clamping of the linewidth enhancement factor in narrow quantum-well semiconductor lasers [J].
Hader, J ;
Bossert, D ;
Stohs, J ;
Chow, WW ;
Koch, SW ;
Moloney, JV .
APPLIED PHYSICS LETTERS, 1999, 74 (16) :2277-2279
[8]  
HEIMBRODT W, COMMUNICATION
[9]   Gas-source MBE of GaInNAs for long-wavelength laser diodes [J].
Kondow, M ;
Kitatani, T ;
Larson, MC ;
Nakahara, K ;
Uomi, K ;
Inoue, H .
JOURNAL OF CRYSTAL GROWTH, 1998, 188 (1-4) :255-259
[10]   Theory of enhanced bandgap non-parabolicity in GaNxAs1-x and related alloys [J].
Lindsay, A ;
O'Reilly, EP .
SOLID STATE COMMUNICATIONS, 1999, 112 (08) :443-447
12