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Use of successive ionic layer adsorption and reaction (SILAR) method for amorphous titanium dioxide thin films growth

被引：40
作者：
Kale, S. S.
Mane, R. S.
Chung, Hoeil
Yoon, Moon-Young
Lokhande, C. D.
Han, Sung-Hwan
机构：
[1] Hanyang Univ, Dept Chem, Inorgan Nanomat Lab, Seoul 133791, South Korea
[2] Shivaji Univ, Dept Phys, Thin Film Phys Lab, Kolhapur 416004, Maharashtra, India
来源：
APPLIED SURFACE SCIENCE | 2006年 / 253卷 / 02期
关键词：
titanium dioxide; SILAR; XRD; SEM; UV-vis; electrical resistivity;
D O I：
10.1016/j.apsusc.2005.12.082
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Use of successive ionic layer adsorption and reaction (SILAR) method was preferred for the growth of amorphous titanium dioxide (TiO2) thin films at ambient temperature. Further, these films were annealed at 673 K for 2 h in air for structural improvement and characterized for structural, surface morphological, optical and electrical properties. An amorphous structure of TiO2 was retained even after annealing as confirmed from XRD studies. The spherical grains of relatively large size were compressed after annealing. A red shift in band gap energy and decrease in electrical resistivity were observed due to annealing treatment. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码：421 / 424
页数：4
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