Screening phenomena on oxide surfaces and its implications for local electrostatic and transport measurements

被引:151
作者
Kalinin, SV [1 ]
Bonnell, DA
机构
[1] Oak Ridge Natl Lab, Condensed Matter Sci Div, Oak Ridge, TN 37831 USA
[2] Univ Penn, Dept Mat Sci & Engn, Philadelphia, PA 19104 USA
关键词
D O I
10.1021/nl0350837
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The determination of local electrical, electrostatic, and transport properties of materials by ambient scanning probe microscopy (SPM) is shown to be strongly affected by the adsorption of charged species. Associated surface screening results in new phenomena including potential retention above the Curie temperature on ferroelectric surfaces and potential inversion on grain boundary-surface junctions. Implications of screening for a variety of SPMs including piezoresponse force microscopy and transport measurements in carbon nanotubes and molecular electronic devices are discussed.
引用
收藏
页码:555 / 560
页数:6
相关论文
共 25 条
[1]   Scanned probe microscopy of electronic transport in carbon nanotubes [J].
Bachtold, A ;
Fuhrer, MS ;
Plyasunov, S ;
Forero, M ;
Anderson, EH ;
Zettl, A ;
McEuen, PL .
PHYSICAL REVIEW LETTERS, 2000, 84 (26) :6082-6085
[2]  
Bonnell D., 2000, Scanning probe microscopy and spectroscopy
[3]   Measurement of induced surface charges, contact potentials, and surface states in GaN by electric force microscopy [J].
Bridger, PM ;
Bandic, ZZ ;
Piquette, EC ;
McGill, TC .
APPLIED PHYSICS LETTERS, 1999, 74 (23) :3522-3524
[4]   Real-time evolution of trapped charge in a SiO2 layer:: An electrostatic force microscopy study [J].
Buh, GH ;
Chung, HJ ;
Kuk, Y .
APPLIED PHYSICS LETTERS, 2001, 79 (13) :2010-2012
[5]   NANOMETER-SCALE IMAGING OF POTENTIAL PROFILES IN OPTICALLY-EXCITED N-I-P-I HETEROSTRUCTURE USING KELVIN PROBE FORCE MICROSCOPY [J].
CHAVEZPIRSON, A ;
VATEL, O ;
TANIMOTO, M ;
ANDO, H ;
IWAMURA, H ;
KANBE, H .
APPLIED PHYSICS LETTERS, 1995, 67 (21) :3069-3071
[6]   Surface potential of ferroelectric thin films investigated by scanning probe microscopy [J].
Chen, XQ ;
Yamada, H ;
Horiuchi, T ;
Matsushige, K ;
Watanabe, S ;
Kawai, M ;
Weiss, PS .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1999, 17 (05) :1930-1934
[7]   Noncontact scanning probe microscope potentiometry of surface charge patches: Origin and interpretation of time-dependent signals [J].
Cunningham, S ;
Larkin, IA ;
Davis, JH .
APPLIED PHYSICS LETTERS, 1998, 73 (01) :123-125
[8]   MODIFICATION OF HYDROGEN-PASSIVATED SILICON BY A SCANNING TUNNELING MICROSCOPE OPERATING IN AIR [J].
DAGATA, JA ;
SCHNEIR, J ;
HARARY, HH ;
EVANS, CJ ;
POSTEK, MT ;
BENNETT, J .
APPLIED PHYSICS LETTERS, 1990, 56 (20) :2001-2003
[9]   MAPPING OF MOBILE CHARGES ON INSULATOR SURFACES WITH THE ELECTROSTATIC FORCE MICROSCOPE [J].
DOMANSKY, K ;
LENG, Y ;
WILLIAMS, CC ;
JANATA, J ;
PETELENZ, D .
APPLIED PHYSICS LETTERS, 1993, 63 (11) :1513-1515
[10]  
Garcia R, 1998, APPL PHYS LETT, V72, P2295, DOI 10.1063/1.121340