Real-time evolution of trapped charge in a SiO2 layer:: An electrostatic force microscopy study

被引：62

作者：

Buh, GH ^{[1
]}

Chung, HJ

Kuk, Y

机构：

[1] Seoul Natl Univ, Interuniv Semicond Res Ctr, Ctr Sci Nanometer Scale, Seoul 151742, South Korea

[2] Seoul Natl Univ, Dept Phys, Seoul 151742, South Korea

来源：

APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 13期

关键词：

D O I：

10.1063/1.1404404

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Time-dependent motion of localized electrons and holes trapped in a SiO2 layer is visualized with electrostatic force microscopy. Both negative and positive charges of up to similar to 10(10) e/cm(2) are trapped at a SiO2-Si interface in similar to 500-nm-diam area with a voltage stress between the tip and the sample. There is a higher probability for trapped charges to spread out in the plane direction than to de-trap toward the Si substrate. The dynamics is explained with diffusion and drift of the charges induced by Coulombic interaction. (C) 2001 American Institute of Physics.

引用

页码：2010 / 2012

页数：3

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