Charge trap dynamics in a SiO2 layer on Si by scanning capacitance microscopy

被引：53

作者：

Kang, CJ ^{[1
]}

Buh, GH

Lee, S

Kim, CK

Mang, KM

Im, C

Kuk, Y

机构：

[1] Seoul Natl Univ, Interuniv Semicond Res Ctr, Ctr Sci Nanometer Scale, NCRI, Seoul 151742, South Korea

[2] Seoul Natl Univ, Dept Phys, Seoul 151742, South Korea

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 13期

关键词：

D O I：

10.1063/1.123095

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Trapped electrons and holes, and their dynamics, were visualized from spatially resolved capacitance-voltage (C-V) curves and dC/dV images using scanning capacitance microscopy. A trapped charge of 10(-16) -10(-18) C, localized within 2 mu m diam circular test structures, was imaged. The detrapping process of the trapped electrons can be explained with a quantum-mechanical tunneling model. (C) 1999 American Institute of Physics. [S0003-6951(99)01513-2].

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页码：1815 / 1817

页数：3

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