Depth dependent carrier density profile by scanning capacitance microscopy

The depth dependent carrier density was measured on an arsenic implanted silicon sample using scanning capacitance microscopy (SCM). The capacitance versus voltage scan was performed by applying de biases with a dither ac signal. A strong de bias dependence was observed at the interface of an abrupt junction between n(+) and p. The bias dependent SCM images shaw good agreement with quasi-three dimensional simulations, suggesting that they can be used to map a device structure. (C) 1997 American Institute of Physics.