Imaging of a silicon pn junction under applied bias with scanning capacitance microscopy and Kelvin probe force microscopy

被引：45

作者：

Buh, GH ^{[1
]}

Chung, HJ

Kim, CK

Yi, JH

Yoon, IT

Kuk, Y

机构：

[1] Seoul Natl Univ, Interuniv Semicond Res Ctr, Ctr Sci Nanometer Scale, NCRI, Seoul 151742, South Korea

[2] Seoul Natl Univ, Dept Phys, Seoul 151742, South Korea

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 01期

关键词：

D O I：

10.1063/1.126892

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Scanning capacitance microscopy (SCM) and Kelvin probe force microscopy (KPFM) are used to image the electrical structure of a silicon pn junction under applied bias. With SCM, the carrier density inside a diode is imaged directly. With KPFM, the surface potential distribution of an operating diode is measured, revealing different behavior from that in bulk. The surface potential drop is extended deep into the lightly p-doped region at reverse bias, reflecting the existence of the surface space-charge region as confirmed by the numerical simulation. (C) 2000 American Institute of Physics. [S0003-6951(00)03427-6].

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页码：106 / 108

页数：3

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