THEORY OF HOPPING TRANSPORT OF HOLES IN AMORPHOUS SIO2

A quantum-mechanical theory of hole transport in SiO2 is developed based on modeling of the oxide as an array of time-dependent δ-function potential well distribution. Holes undergo a variable range hopping transport which is dispersive in nature. The oxide, being an insulator, involves a maximum cutoff phonon frequency of 1014-1015 s-1. The Schrödinger equation is solved along with the Poisson equation using a piecewise linear internal field. The theory is applied to metal-oxide-semiconductor structures subjected to a short radiation pulse. © 1995 American Institute of Physics.