Detailed analysis of beta-SiC formation by high dose carbon ion implantation in silicon

被引：20

作者：

RomanoRodriguez, A ^{[1
]}

Serre, C ^{[1
]}

CalvoBarrio, L ^{[1
]}

PerezRodriguez, A ^{[1
]}

Morante, JR ^{[1
]}

Kogler, R ^{[1
]}

Skorupa, W ^{[1
]}

机构：

[1] ROSSENDORF INC,FORSCHUNGSZENTRUM ROSSENDORF EV,INST IONENPHYS & MAT FORSCH,D-01314 DRESDEN,GERMANY

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1996年 / 36卷 / 1-3期

关键词：

silicon; ion implantation;

D O I：

10.1016/0921-5107(95)01283-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The detailed characterization of beta-SiC formation in silicon by high dose carbon ion implantation is reported. A buried layer containing beta-SiC precipitates of 7-10 nm in size is directly formed by implanting at 500 degrees C. The precipitates formed are almost perfectly aligned with the silicon substrate, but they present incoherent interfaces to it, and are nearly free of defects. After implantation, the crystallinity of beta-SiC precipitates is improved by an annealing step, although their size remains unchanged.

引用

页码：282 / 285

页数：4

共 9 条

[1] FORMATION OF CRYSTALLINE SIC BURIED LAYER BY HIGH-DOSE IMPLANTATION OF MEV CARBON-IONS AT HIGH-TEMPERATURE [J].