GROWTH OF CRYSTALLINE 3C-SIC ON SI AT REDUCED TEMPERATURES BY CHEMICAL-VAPOR-DEPOSITION FROM SILACYCLOBUTANE

被引：87

作者：

STECKL, AJ ^{[1
]}

YUAN, C ^{[1
]}

LI, JP ^{[1
]}

LOBODA, MJ ^{[1
]}

机构：

[1] DOW CORNING CORP,MIDLAND,MI 48686

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 24期

关键词：

D O I：

10.1063/1.110140

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Low-pressure chemical vapor deposition of SiC on carbonized Si from the single-source organosilane precursor silacyclobutane (C-C3H6SiH2,SCB) has been investigated from 800 to 1200-degrees-C. On atmospheric pressure-carbonized (100)Si, SiC films grown at 900-degrees-C and above exhibit a transmission electron diffraction pattern consisting only of sharp spots with cubic symmetry. X-ray diffraction (XRD) of these films exhibit primarily the (200) and (400) SiC lines. XRD of films grown at 900-degrees-C on Si(111) exhibits only an extremely large SiC(111) peak with a full width at half-maximum of 450 arcsec. Using a SCB flow rate of 1 sccm, a SiC growth rate of 4-5 mum/h was obtained on Si at 900-degrees-C. Crystalline SiC films have also been grown by SCB at a temperature of 800-degrees-C.

引用

页码：3347 / 3349

页数：3

共 20 条

[1] GROWTH OF HETEROEPITAXIAL SIC FILMS BY PYROLYSIS OF VARIOUS ALKYL-SILICON COMPOUNDS [J].