LOW-TEMPERATURE EPITAXIAL-GROWTH OF 3C-SIC ON (111) SILICON SUBSTRATES

被引：8

作者：

HIRABAYASHI, Y

KOBAYASHI, K

KARASAWA, S

机构：

[1] Industrial Research Institute of Kanagawa Prefecture, Kanazawaku, Yokohama, 236

来源：

JOURNAL OF CRYSTAL GROWTH | 1990年 / 99卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(90)90528-S

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

3C-SiC single crystals have been grown epitaxially on (111) silicon substrates at relatively low temperature of 850 to 900°C and pressure of 1 Torr. The growth method was similar to electron assisted chemical vapor deposition (EACVD). Reflection high energy electron diffraction patterns showed that a layer of 3C-SiC single crystalline was formed on the Si wafer. Auger electron spectroscopy measurement showed that the layers were stoichiometric. © 1990.

引用

页码：284 / 286

页数：3

共 8 条

[1]

HASS TW, 1972, J APPL PHYS, V43, P1853

[2]

HIRABAYASHI Y, 1989, 9TH INT C CRYST GROW

[3] GROWTH OF SINGLE-CRYSTAL FILMS OF CUBIC SILICON CARBIDE ON SILICON [J].