LOW-TEMPERATURE 3C-SIC HETEROEPITAXIAL FILM GROWTH ON SI BY REACTIVE-ION-BEAM DEPOSITION

被引：17

作者：

YAMADA, H

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 05期

关键词：

D O I：

10.1063/1.342854

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2084 / 2089

页数：6

共 36 条

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