REMOVAL OF OXIDE-FILMS FROM SILICON SURFACES IN A HIGH-VACUUM SYSTEM - INSITU ELLIPSOMETRIC STUDY

被引：26

作者：

HOPPER, MA ^{[1
]}

CLARKE, RA ^{[1
]}

YOUNG, L ^{[1
]}

机构：

[1] UNIV BRITISH COLUMBIA,DEPT ELECT ENGN,VANCOUVER V6T 1W5,BRITISH COLUMBI,CANADA

来源：

SURFACE SCIENCE | 1976年 / 56卷 / 01期

关键词：

D O I：

10.1016/0039-6028(76)90468-4

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：472 / 481

页数：10

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